250纳米InP DHBT技术中的300 ghz宽带注入锁频四倍器

Surajit Kumar Nath, Daekeun Yoon
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引用次数: 0

摘要

本文采用250nm InP DHBT技术,设计了一种频率范围为250 ~ 350 GHz的次太赫兹频段四倍频器。该电路采用d波段倍频器和h波段注入锁定推推振荡器产生x4频率。介绍了一种集电极基极反馈技术,以提高注入锁定推推式科尔皮茨振荡器的谐波输出功率。该四倍频器在328-GHz频段的四次谐波峰值输出功率为- 3.3 dBm, DC-RF效率为1.75%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 300-GHz Wideband Injection Locked Frequency Quadrupler in 250-nm InP DHBT Technology
A sub-THz band frequency quadrupler with a frequency range of 250 to 350 GHz is presented in this paper using 250-nm InP DHBT technology. The circuit employs a D-band frequency doubler with an H-band injection-locked push-push oscillator to produce x4 frequency. A collector-to-base feedback technique is introduced to boost the harmonic output power of the injection-locked push-push Colpitts oscillator. The proposed quadrupler showed 4th harmonic peak output power of −3.3 dBm and 1.75 % DC-RF efficiency at 328-GHz.
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