{"title":"接近光速的芯片上电气互连","authors":"R. Chang","doi":"10.1109/VLSIC.2002.1015032","DOIUrl":null,"url":null,"abstract":"The propagation limits of electrical signals for systems built with conventional silicon processing are explored. Data transmission near the speed of light with an all-electrical system can be achieved by taking advantage of the inductance-dominated high-frequency regime of on-chip interconnect. In a 0.18 /spl mu/m, 6-level Aluminum CMOS technology, an overall delay of 278 ps for a 20 mm long line corresponding to a propagation velocity of one half the speed of light in silicon dioxide has been demonstrated.","PeriodicalId":162493,"journal":{"name":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Near speed-of-light on-chip electrical interconnect\",\"authors\":\"R. Chang\",\"doi\":\"10.1109/VLSIC.2002.1015032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The propagation limits of electrical signals for systems built with conventional silicon processing are explored. Data transmission near the speed of light with an all-electrical system can be achieved by taking advantage of the inductance-dominated high-frequency regime of on-chip interconnect. In a 0.18 /spl mu/m, 6-level Aluminum CMOS technology, an overall delay of 278 ps for a 20 mm long line corresponding to a propagation velocity of one half the speed of light in silicon dioxide has been demonstrated.\",\"PeriodicalId\":162493,\"journal\":{\"name\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2002.1015032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2002.1015032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Near speed-of-light on-chip electrical interconnect
The propagation limits of electrical signals for systems built with conventional silicon processing are explored. Data transmission near the speed of light with an all-electrical system can be achieved by taking advantage of the inductance-dominated high-frequency regime of on-chip interconnect. In a 0.18 /spl mu/m, 6-level Aluminum CMOS technology, an overall delay of 278 ps for a 20 mm long line corresponding to a propagation velocity of one half the speed of light in silicon dioxide has been demonstrated.