接近光速的芯片上电气互连

R. Chang
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引用次数: 22

摘要

探讨了传统硅加工系统的电信号传播极限。利用片上互连的电感主导的高频机制,可以实现全电气系统接近光速的数据传输。在0.18 /spl mu/m的6级铝CMOS技术中,已经证明了20mm长的线路的总延迟为278 ps,对应于二氧化硅中光速的一半。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Near speed-of-light on-chip electrical interconnect
The propagation limits of electrical signals for systems built with conventional silicon processing are explored. Data transmission near the speed of light with an all-electrical system can be achieved by taking advantage of the inductance-dominated high-frequency regime of on-chip interconnect. In a 0.18 /spl mu/m, 6-level Aluminum CMOS technology, an overall delay of 278 ps for a 20 mm long line corresponding to a propagation velocity of one half the speed of light in silicon dioxide has been demonstrated.
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