高频隔离型双向DC-DC变换器新一代SiC功率器件的特性与应用

Biao Zhao, Q. Song, Wenhua Liu, Yandong Sun
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引用次数: 14

摘要

本文分析了基于ROHM半导体公司提供的SiC-DMOS和SiC-SBD样品的高频隔离型双向DC-DC转换器(IBDC)的应用性能特点。本文给出了基于sic的变换器的基本设计步骤,并通过分析变换器的开关特性,建立了功率损耗的数学模型。在此基础上,分析了硅基变换器的功率损耗和效率特性,并给出了相关实验结果。理论分析和实验结果表明,硅基变换器比硅基变换器具有更好的性能;在未来的智能电网中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and application of next-generation SiC power devices for high-frequency isolated bidirectional DC-DC converter
In this paper, the application performance characteristics of high-frequency isolated bidirectional DC-DC converter (IBDC) based on SiC-DMOS and SiC-SBD samples provided by ROHM SEMICONDUCTOR Inc. are analyzed. The paper gave the basic design procedure of SiC-based converter, and established the mathematical model of power losses by analyzing the switching characteristic of the converter. On this basis, the power loss and efficiency characteristics of the SiC-based converter were analyzed and the related experimental results were presented. Theoretical analysis and experimental results show that the SiC-based converter has better performance than the Si-based converter; it will have a wide application prospect in the future smart electricity network.
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