{"title":"0.5 v 1.9 ghz低功耗锁相环,0.18 μm CMOS","authors":"H. Hsieh, Chung-Ting Lu, Liang-Hung Lu","doi":"10.1109/VLSIC.2007.4342699","DOIUrl":null,"url":null,"abstract":"Implemented in a standard 0.18-mum CMOS process, a 0.5-V 1.9-GHz low-power phase-locked loop (PLL) is presented. Due to the use of the forward-body-bias technique, the threshold voltage of the MOSFETs is effectively reduced, making it possible to operate the PLL at an ultra-low supply voltage. In addition, various techniques for low-power and low-voltage operations are also adopted in the design of the building blocks. With a dc power consumption of 4.5 mW, the fabricated PLL measures in-band and out-of-band phase noise of -83.4 dBc/Hz and -135.3 dBc/Hz at 100-kHz and 10-MHz frequency offset, respectively.","PeriodicalId":261092,"journal":{"name":"2007 IEEE Symposium on VLSI Circuits","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":"{\"title\":\"A 0.5-V 1.9-GHz low-power phase-locked loop in 0.18-μm CMOS\",\"authors\":\"H. Hsieh, Chung-Ting Lu, Liang-Hung Lu\",\"doi\":\"10.1109/VLSIC.2007.4342699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Implemented in a standard 0.18-mum CMOS process, a 0.5-V 1.9-GHz low-power phase-locked loop (PLL) is presented. Due to the use of the forward-body-bias technique, the threshold voltage of the MOSFETs is effectively reduced, making it possible to operate the PLL at an ultra-low supply voltage. In addition, various techniques for low-power and low-voltage operations are also adopted in the design of the building blocks. With a dc power consumption of 4.5 mW, the fabricated PLL measures in-band and out-of-band phase noise of -83.4 dBc/Hz and -135.3 dBc/Hz at 100-kHz and 10-MHz frequency offset, respectively.\",\"PeriodicalId\":261092,\"journal\":{\"name\":\"2007 IEEE Symposium on VLSI Circuits\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"40\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2007.4342699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2007.4342699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40
摘要
在标准的0.18 μ m CMOS工艺中实现了一个0.5 v 1.9 ghz低功率锁相环(PLL)。由于使用正向体偏置技术,mosfet的阈值电压有效降低,使得在超低电源电压下工作锁相环成为可能。此外,在构建模块的设计中还采用了各种低功耗和低电压操作技术。该锁相环的直流功耗为4.5 mW,在100 khz和10 mhz频率偏移时,带内和带外相位噪声分别为-83.4 dBc/Hz和-135.3 dBc/Hz。
A 0.5-V 1.9-GHz low-power phase-locked loop in 0.18-μm CMOS
Implemented in a standard 0.18-mum CMOS process, a 0.5-V 1.9-GHz low-power phase-locked loop (PLL) is presented. Due to the use of the forward-body-bias technique, the threshold voltage of the MOSFETs is effectively reduced, making it possible to operate the PLL at an ultra-low supply voltage. In addition, various techniques for low-power and low-voltage operations are also adopted in the design of the building blocks. With a dc power consumption of 4.5 mW, the fabricated PLL measures in-band and out-of-band phase noise of -83.4 dBc/Hz and -135.3 dBc/Hz at 100-kHz and 10-MHz frequency offset, respectively.