多离子注入制备超低导通电阻60-100 V超结umosfet

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239900

H. Ninomiya, Y. Miura, K. Kobayashi

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引用次数: 19

摘要

我们提出了一种具有超结(SJ)结构的新型低压umosfet，以实现超低导通电阻。目前的SJ结构是由多个不同能量的硼离子注入形成的，最高可达2 MeV。该技术使我们能够获得具有平坦侧壁的p柱，从而最大限度地减少对漂移传导的干扰。SJ二极管已经清楚地表明击穿电压增强，正如预期的那样，从SJ特性。当击穿电压为78 V时，sj - umosfet的导通电阻显著降低。

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Ultra-low on-resistance 60-100 V superjunction UMOSFETs fabricated by multiple ion-implantation

We propose new low-voltage UMOSFETs with superjunction (SJ) structures to achieve ultra-low on-resistance. The present SJ structure has been formed by multiple boron ion implantations with varied energies up to 2 MeV. This technique enabled us to obtain p-columns with flat sidewalls, which minimize the interference to the drift conduction. The SJ diodes have clearly indicated the breakdown voltage enhancement, as expected, from the SJ characteristics. Drastic on-resistance reduction was demonstrated for the SJ-UMOSFETs with a breakdown voltage of 78 V.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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