掺锡Ge插入层对柔性衬底上铁磁Fe3Si薄膜外延生长的影响

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874683

H. Higashi, Y. Fujita, M. Kawano, J. Hirayama, S. Yamada, Jong-Hyeok Park, T. Sadoh, M. Miyao, K. Hamaya

{"title":"掺锡Ge插入层对柔性衬底上铁磁Fe3Si薄膜外延生长的影响","authors":"H. Higashi, Y. Fujita, M. Kawano, J. Hirayama, S. Yamada, Jong-Hyeok Park, T. Sadoh, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874683","DOIUrl":null,"url":null,"abstract":"By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate\",\"authors\":\"H. Higashi, Y. Fujita, M. Kawano, J. Hirayama, S. Yamada, Jong-Hyeok Park, T. Sadoh, M. Miyao, K. Hamaya\",\"doi\":\"10.1109/ISTDM.2014.6874683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"113 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

通过插入Ge(Sn)层及其CMP处理，我们改善了一种heusler化合物Fe3Si在柔性衬底上(111)取向Ge上的晶体和磁性。这项工作是柔性显示系统器件高性能柔性自旋电子学的第一步。

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Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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