H. Thomas, J.K. Luo, D. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn
{"title":"低温生长GaAs绝缘体对GaAs- fet击穿电压的改善","authors":"H. Thomas, J.K. Luo, D. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn","doi":"10.1109/ISPSD.1994.583686","DOIUrl":null,"url":null,"abstract":"An as-grown GaAs layer grown by molecular beam epitaxy at low temperature (LT-) has been used as an insulator for power GaAs field effect transistors (MISFETs). It was found that the LT-GaAs layer successfully passivates the surface, of GaAs-FETs, eliminates the hysterisis of drain-source current, and improves the breakdown behaviour. The breakdown voltage, V/sub BD/, for MISFETs is as high as 40-50 V for 2 /spl mu/m spacing between the gate and drain contacts, and is independent of the doping-thickness product. V/sub BD/ also exhibits an increase on decrease of temperature, and suggests a high breakdown voltage in the high frequency domain. It is the particular electrical properties of the as-grown LT-GaAs layer which are found to be responsible for the superior properties of the LT-GaAs MISFETs. The LT-GaAs layer exhibits ohmic behaviour which leads to a linear distribution of electric field between the gate and drain. The dominant hopping conduction eliminates the concentration of injected electrons, while the high breakdown field of the LT-GaAs layer ensures a high breakdown voltage of LT-GaAs MISFETs.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator\",\"authors\":\"H. Thomas, J.K. Luo, D. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn\",\"doi\":\"10.1109/ISPSD.1994.583686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An as-grown GaAs layer grown by molecular beam epitaxy at low temperature (LT-) has been used as an insulator for power GaAs field effect transistors (MISFETs). It was found that the LT-GaAs layer successfully passivates the surface, of GaAs-FETs, eliminates the hysterisis of drain-source current, and improves the breakdown behaviour. The breakdown voltage, V/sub BD/, for MISFETs is as high as 40-50 V for 2 /spl mu/m spacing between the gate and drain contacts, and is independent of the doping-thickness product. V/sub BD/ also exhibits an increase on decrease of temperature, and suggests a high breakdown voltage in the high frequency domain. It is the particular electrical properties of the as-grown LT-GaAs layer which are found to be responsible for the superior properties of the LT-GaAs MISFETs. The LT-GaAs layer exhibits ohmic behaviour which leads to a linear distribution of electric field between the gate and drain. The dominant hopping conduction eliminates the concentration of injected electrons, while the high breakdown field of the LT-GaAs layer ensures a high breakdown voltage of LT-GaAs MISFETs.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator
An as-grown GaAs layer grown by molecular beam epitaxy at low temperature (LT-) has been used as an insulator for power GaAs field effect transistors (MISFETs). It was found that the LT-GaAs layer successfully passivates the surface, of GaAs-FETs, eliminates the hysterisis of drain-source current, and improves the breakdown behaviour. The breakdown voltage, V/sub BD/, for MISFETs is as high as 40-50 V for 2 /spl mu/m spacing between the gate and drain contacts, and is independent of the doping-thickness product. V/sub BD/ also exhibits an increase on decrease of temperature, and suggests a high breakdown voltage in the high frequency domain. It is the particular electrical properties of the as-grown LT-GaAs layer which are found to be responsible for the superior properties of the LT-GaAs MISFETs. The LT-GaAs layer exhibits ohmic behaviour which leads to a linear distribution of electric field between the gate and drain. The dominant hopping conduction eliminates the concentration of injected electrons, while the high breakdown field of the LT-GaAs layer ensures a high breakdown voltage of LT-GaAs MISFETs.