V/III比对MOCVD生长在GaAs衬底上的GaSb薄膜表面形貌的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI:10.1109/SMELEC.2014.6920896

C. Hsiao, Chun-Xiao Liu, S. Huynh, T. Minh, H. Yu, Hong-Quan Nguyen, J. Maa, S. Chang, E. Chang

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引用次数: 0

摘要

采用金属有机化学气相沉积(MOCVD)技术研究了不同V/III比的GaSb薄膜在高晶格错配GaAs(001)衬底上的外延生长。在最佳V/III比为2.5时，我们发现在GaAs/GaSb界面上存在许多周期性90°界面错配位错(IMF)阵列。采用不同V/III比(1.25、2.5、5)时，表面粗糙度分别为3.6nm、2.2nm、3.8nm左右。这些结果表明，可以有效地改善GaSb/GaAs异质结构表面的山谷结构，形成光滑的表面形貌。

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Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.

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2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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