I. Smorchkova, M. Wojtowicz, R. Tsai, R. Sandhu, M. Barsky, C. Namba, Po-Hsin Liu, R. Dia, M. Truong, D. Ko, J. Wang, Huei Wang, A. Khan
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AlGaN/GaN HEMT high-power and low-noise performance at f/spl ges/20 GHz
Reports on the power and noise performance of AlGaN/GaN HEMTs in the K (18-27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33% has been achieved on an 8-finger 0.2 /spl mu/m/spl times/500 /spl mu/m device. Minimum noise figure of 1.4 dB has been achieved on a 0.15 /spl mu/m/spl times/200 /spl mu/m device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.
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