双cofeb /MgO界面和阶梯蚀刻结构垂直MTJ的标化性能

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839662

C. Chien, Ding-Yeong Wang, Sheng-Huang Huang, K. Shen, Shan-Yi Yang, J. Shyu, Keng-Ming Kuo, Young-Shying Chen, Yung-Hung Wang, T. Ku, D. Deng

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引用次数: 1

摘要

我们建立并研究了具有双MgO/CoFeB界面和阶梯蚀刻结构的垂直磁隧道结(p-MTJs)的尺寸缩放效应。虽然自旋转矩传递(STT)开关电流随着MTJ面积的增大而减小，但电流密度增大。我们的微磁模拟验证了这是STT开关的固有特性。开关模式由小结的相干切换逐渐转变为大结的非相干切换。相干开关的能量密度较高，需要较高的自旋电流密度。在相同的电流密度下，较小的尺寸需要较长的开关时间。幸运的是，对于较小的MTJ，写效率(Δ/Isw)更高。

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Scaling properties of perpendicular MTJ with dual-CoFeB/MgO interfaces and step-etch structure

We had built and studied the size scaling effect of perpendicular magnetic tunnel junctions (p-MTJs) with dual MgO/CoFeB interface and step-etch structure. Although the spin-torque-transfer (STT) switching current reduces with MTJ area, the current density increases. Our micromagnetic simulations verify that this is an intrinsic property of STT switching. The switching mode shifts gradually from coherent switching in small junctions to incoherent in large junctions. The energy density of coherent switching is higher and demands higher spin current density. At same current density, smaller size takes longer time to switch. Fortunately, the write efficiency (Δ/Isw) is higher for smaller MTJ.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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