测量，建模和电模拟横向PIN光电二极管在薄膜soi的高量子效率和高选择性在紫外范围内

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256809

A. Afzalian, D. Flandre

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引用次数: 10

摘要

本文通过测量、建模和模拟研究了SOI结构，特别是埋藏氧化物的存在对完全耗尽薄膜绝缘体上硅(SOI)横向光电探测器量子效率与波长特性的影响。

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Measurements, modelling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range

The present paper investigates the influence of the SOI structure and in particular the presence of the buried oxide on the Quantum efficiency vs. wavelength characteristics of fully-depleted thin film silicon-on-insulator (SOI) lateral photodetectors by measurements, modelling and simulations.

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ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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