开关条件下MOSFET内嵌二极管性能分析

2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2019-03-01 DOI:10.1109/ISDCS.2019.8719253

Takao Yamamoto, Y. Fukunaga, D. Ikoma, M. Miura-Mattausch, D. Navarro, H. Mattausch

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引用次数: 0

摘要

测量结果表明，SiC mosfet中嵌入二极管的I-V特性显示出意想不到的Vgs依赖性。通过对二维器件的模拟，分析了产生这种现象的原因。发现不可忽略的双极效应是其根源。此外，还开发了一个紧凑的模型来再现测量的Vgs依赖性。该模型可以根据器件的结构特征预测这种意想不到的Vgs依赖性。

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Analysis of Embedded-Diode Performance in MOSFET under Switching Condition

It has been measured that the I-V characteristics of the embedded diode in SiC MOSFETs shows an unexpected Vgs dependence. With the use of 2D-device simulation, we have analyzed the reason for this phenomenon. It was found that a non-negligible bipolar effect is the origin. Further, a compact model has been developed to reproduce the measured Vgs dependence. The model enables the prediction of this unexpected Vgs dependence based on the device’s structural features.

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2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)

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