{"title":"低功耗Gb/s CMOS接口","authors":"Y. Ohtomo, M. Nogawa","doi":"10.1109/VLSIC.1995.520673","DOIUrl":null,"url":null,"abstract":"For high-speed digital systems, it is important to develop point-to-point Gb/s interfaces that consume low power during low-transition-rate operation. This paper presents two novel Gb/s CMOS interfaces. One uses an active-pull-up (APU) technique to raise the maximum transmission speed. In the other interface, the transmission wave form is changed from digital to impulse to markedly reduce power consumption at low transition rate.","PeriodicalId":256846,"journal":{"name":"Digest of Technical Papers., Symposium on VLSI Circuits.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low power Gb/s CMOS interfaces\",\"authors\":\"Y. Ohtomo, M. Nogawa\",\"doi\":\"10.1109/VLSIC.1995.520673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For high-speed digital systems, it is important to develop point-to-point Gb/s interfaces that consume low power during low-transition-rate operation. This paper presents two novel Gb/s CMOS interfaces. One uses an active-pull-up (APU) technique to raise the maximum transmission speed. In the other interface, the transmission wave form is changed from digital to impulse to markedly reduce power consumption at low transition rate.\",\"PeriodicalId\":256846,\"journal\":{\"name\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1995.520673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., Symposium on VLSI Circuits.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1995.520673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
For high-speed digital systems, it is important to develop point-to-point Gb/s interfaces that consume low power during low-transition-rate operation. This paper presents two novel Gb/s CMOS interfaces. One uses an active-pull-up (APU) technique to raise the maximum transmission speed. In the other interface, the transmission wave form is changed from digital to impulse to markedly reduce power consumption at low transition rate.