通过不同测量方法比较GaN hemt的热结果:用3D模拟验证

A. Jakani, R. Sommet, Florent Gaillard, J. Nallatamby
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引用次数: 3

摘要

在这项工作中,热反射测量技术应用于GaN hemt晶体管,GH15 8x50μm和6x50μm来自UMS铸造厂。这些测量结果与3D模拟进行了比较,也与我们之前在[1]中开发的基于电气方法的测量结果进行了比较。结果与[2]中提出的GaN hemt的热化时间常数之间的良好一致性最终验证了我们所有致力于热阻或热时间常数的方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of GaN HEMTs Thermal Results through different measurements methodologies: Validation with 3D simulation
In this work, thermoreflectance measurement technique is applied to GaN HEMTs transistors, GH15 8x50μm and 6x50μm from the UMS foundry. These measurements are compared to 3D simulation, but also to measurements based on an electrical approach we developed previously in [1]. The good agreement between results and the thermalization time constant proposed in [2] for GaN HEMTs validate finally all our approach dedicated to thermal resistance or thermal time constant
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