{"title":"利用乙基金属有机材料MOCVD生长碳掺杂InGaAs层","authors":"H. Yokohama, K. Shiojima, G. Araki","doi":"10.1109/ICIPRM.2013.6562612","DOIUrl":null,"url":null,"abstract":"Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr4 was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr4 flow and a large carrier density of 1.4 × 1019 cm-3 were achieved.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOCVD growth of carbon-doped InGaAs layers using ethyl-base metal organic materials\",\"authors\":\"H. Yokohama, K. Shiojima, G. Araki\",\"doi\":\"10.1109/ICIPRM.2013.6562612\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr4 was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr4 flow and a large carrier density of 1.4 × 1019 cm-3 were achieved.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562612\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOCVD growth of carbon-doped InGaAs layers using ethyl-base metal organic materials
Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr4 was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr4 flow and a large carrier density of 1.4 × 1019 cm-3 were achieved.
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