使用scts的0.85 V CMOS电压和电流基准

Thainann H. P. de Castro, R. Moreno, Dalton Martini Colombo
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引用次数: 3

摘要

本文提出了一种新的电压电流基准电路拓扑结构,采用自级联码复合晶体管,工作电压最低为0.85 V。采用nmos版本和pmos版本的自级联编码复合晶体管,基准器件的标称输出电压和电流分别为540 mV和1.451 μ a,温度系数分别为20 ppm/°C和75 ppm/°C。考虑的温度范围为- 30°C至100°C。该电路采用标准的0.18µm n阱CMOS工艺,版图面积为0.175 mm2(269µm × 654µm),电源功耗为9.1µa。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.85 V CMOS voltage and current reference using SCCTs
A new circuit topology of a voltage and current reference using self-cascode composite transistors and operating with a minimum supply voltage of 0.85 V is proposed in this work. Using nmos-version and pmos-version self-cascode composite transistors, the reference generates a nominal output voltage and current equal to 540 mV and 1.451 µA with temperature coefficients of 20 ppm/°C and 75 ppm/°C, respectively. The considered temperature range was – 30 °C to 100 °C. The circuit was implemented in a standard 0.18 µm n-well CMOS process, with the layout area of 0.175 mm2 (269 µm × 654 µm), and the supply current consumption of 9.1µA.
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