双栅MOS晶体管自洽优化及性能分析

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194783

S. Monfray, J. Autran, M. Jurczak, T. Skotnicki

{"title":"双栅MOS晶体管自洽优化及性能分析","authors":"S. Monfray, J. Autran, M. Jurczak, T. Skotnicki","doi":"10.1109/ESSDERC.2000.194783","DOIUrl":null,"url":null,"abstract":"The influence of architecture parameters on the charge carrier concentration has been theoretically investigated in both p-channel and n-channel Double Gate MOSFET’s. Based on a self-consistent solving of the Schrödinger and Poisson equations, this work clearly shows and quantifies the importance of the silicon thin-film thickness for electrical performance optimization of the device.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Self-consistent Optimization and Performance Analysis of Double-Gate MOS Transistors\",\"authors\":\"S. Monfray, J. Autran, M. Jurczak, T. Skotnicki\",\"doi\":\"10.1109/ESSDERC.2000.194783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of architecture parameters on the charge carrier concentration has been theoretically investigated in both p-channel and n-channel Double Gate MOSFET’s. Based on a self-consistent solving of the Schrödinger and Poisson equations, this work clearly shows and quantifies the importance of the silicon thin-film thickness for electrical performance optimization of the device.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194783\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

从理论上研究了结构参数对p沟道和n沟道双栅MOSFET载流子浓度的影响。基于Schrödinger和泊松方程的自一致解，这项工作清楚地显示并量化了硅薄膜厚度对器件电性能优化的重要性。

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Self-consistent Optimization and Performance Analysis of Double-Gate MOS Transistors

The influence of architecture parameters on the charge carrier concentration has been theoretically investigated in both p-channel and n-channel Double Gate MOSFET’s. Based on a self-consistent solving of the Schrödinger and Poisson equations, this work clearly shows and quantifies the importance of the silicon thin-film thickness for electrical performance optimization of the device.

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30th European Solid-State Device Research Conference

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