G. Puzzilli, F. Irrera, A. Padovani, P. Pavan, L. Larcher, A. Arya, V. della Marca, A. Pirovano
{"title":"相变存储器中RESET-SET转换的研究","authors":"G. Puzzilli, F. Irrera, A. Padovani, P. Pavan, L. Larcher, A. Arya, V. della Marca, A. Pirovano","doi":"10.1109/ESSDERC.2008.4681723","DOIUrl":null,"url":null,"abstract":"We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.","PeriodicalId":121088,"journal":{"name":"ESSDERC 2008 - 38th European Solid-State Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"On the RESET-SET transition in Phase Change Memories\",\"authors\":\"G. Puzzilli, F. Irrera, A. Padovani, P. Pavan, L. Larcher, A. Arya, V. della Marca, A. Pirovano\",\"doi\":\"10.1109/ESSDERC.2008.4681723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.\",\"PeriodicalId\":121088,\"journal\":{\"name\":\"ESSDERC 2008 - 38th European Solid-State Device Research Conference\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC 2008 - 38th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2008.4681723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2008 - 38th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2008.4681723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the RESET-SET transition in Phase Change Memories
We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.
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