以技术规模驱动CMOS进入无线通信领域

K. Chew, S. Chu, Che-Choi Leung
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引用次数: 15

摘要

本文综述了技术尺度对CMOS器件射频(RF)性能的影响。给出了主要的主动和被动成分。用180nm晶体管实现了大于50ghz的统一电流增益频率和大于60ghz的统一功率增益频率。在2.45 GHz时,栅极长度为250 nm及以下时,最小噪声系数小于1.5 dB。薄栅和厚栅晶体管的闪烁噪声谱由于标度和氮化的影响提高了一个数量级。在圆形堆叠线圈电感上使用2 /spl mu/m厚的顶部金属铝,在2.45 GHz时实现了接近10的质量因子(Q)和大于50%的Q增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Driving CMOS into the wireless communications arena with technology scaling
This paper provides a review of the impact of technology scaling on the radio-frequency (RF) performance of CMOS devices. The major active and passive elements are presented. Unity current gain frequency and unity power gain frequency of greater than 50 GHz and 60 GHz respectively have been achieved with the 180 nm transistors. The minimum noise figure is less than 1.5 dB at 2.45 GHz for gate lengths of 250 nm and below. The flicker noise spectra of thin- and thick-gate transistors have risen by an order of magnitude due to the effects of scaling and nitridation. Quality factors (Q) close to 10 and Q-enhancement of greater than 50% at 2.45 GHz have been achieved using 2 /spl mu/m thick top aluminimum metal on circular stacked coil inductors.
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