一个0.7至1 GHz的切换lc N-Path LNA，可在≥40 MHz偏移量下抵御FDD-LTE自干扰

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI:10.1109/RFIC.2017.7969071

Gengzhen Qi, B. van Liempd, Pui-in Mak, R. Martins, J. Craninckx

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引用次数: 12

摘要

本文提出了一种适用于FDD-LTE覆盖范围为0.7 ~ 1GHz的自抗干扰LNA。它结合了一个带有增益增强和最佳偏置技术的切换lc n路径网络，以增强≥40MHz偏移量的带外(OOB)线性度。LNA采用0.18µm SOI CMOS实现，在≥40MHz偏置时实现>31.2dB输出抑制，+26.2dBm (+8dBm) OOB-IIP3 (iB1dB)，在+4dBm阻塞功率下实现6.8dB阻塞NF，同时消耗48.4至62.5mW的合理功率。当重新配置为高抑制模式时，LNA提供了一个可调的消除陷波，将输出抑制提高到50dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.7 to 1 GHz switched-LC N-Path LNA resilient to FDD-LTE self-interference at ≥40 MHz offset

This paper proposes a self-interference-resilient LNA for the FDD-LTE covering 0.7 to 1GHz. It incorporates a switched-LC N-path network with gain-boosting and optimum-biasing techniques to enhance the out-of-band (OOB) linearity at ≥40MHz offset. Implemented in 0.18µm SOI CMOS, the LNA achieves >31.2dB output rejection, +26.2dBm (+8dBm) OOB-IIP3 (iB1dB) at ≥40MHz offset and 6.8dB blocker NF at +4dBm blocker power for the default mode, while consuming a reasonable power of 48.4 to 62.5mW. When reconfigured to high-rejection mode, the LNA offers a tunable cancellation notch improving the output rejection to >50dBc.

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2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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