双极晶体管的畸变建模综述

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398185

M. Schroter, P. Sakalas, H. Tran

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引用次数: 0

摘要

综述了双极晶体管高频失真的建模方法。“建模”包括理论研究，这通常适用于双极晶体管，以及紧凑的模型和最新SiGe技术的实验验证。此外，一维器件仿真结果提供了对机理的进一步了解。

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Modeling of distortion in bipolar transistors - a review

An overview on modeling HF distortion in bipolar transistors is given. "Modeling" includes theoretical investigations, which are generally applicable to bipolar transistors, as well as compact models and their experimental verification for recent SiGe technologies. Also, 1D device simulation results provide additional insight into the mechanisms.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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