FinFET中随时间变化的结退化

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI:10.1109/IIRW.2016.7904893

T. Ho, K. Joshi, K. Lee, P. Liao, J. Shih, Y. Lee

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引用次数: 2

摘要

系统地研究了极尺度finfet的源极/漏极结退化(TDJD)问题。验证了结退化可归因于由于施加应力产生新的陷阱而导致的带到带隧道效应的增加。研究了不同应力条件、排水工程和结区对TDJD的影响。基于长期应力数据，首次证明了TDJD符合1/E模型。

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Time dependent junction degradation in FinFET

A systematic study of time dependent source/drain junction degradation (TDJD) for extremely scaled FinFETs is conducted. It is verified that junction degradation can be attributed to the increase in band to band tunneling due to generation of new traps upon application of stress. Impact of varying stress conditions, drain engineering and junction area on TDJD is also studied. It is shown for the first time that TDJD follows 1/E model based on the long-term stress data.

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2016 IEEE International Integrated Reliability Workshop (IIRW)

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