氧化物界面粗糙度对超薄栅极氧化物decanano mosfet阈值电压波动的影响

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 1900-01-01 DOI:10.1109/SISPAD.2000.871226

A. Asenov, S. Kaya

{"title":"氧化物界面粗糙度对超薄栅极氧化物decanano mosfet阈值电压波动的影响","authors":"A. Asenov, S. Kaya","doi":"10.1109/SISPAD.2000.871226","DOIUrl":null,"url":null,"abstract":"In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the quantum mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides\",\"authors\":\"A. Asenov, S. Kaya\",\"doi\":\"10.1109/SISPAD.2000.871226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the quantum mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

本文采用密度梯度(DG)模拟方法，在三维统计尺度上研究了局部氧化物厚度波动对decanano mosfet阈值电压的影响。使用界面自相关函数的标准假设构造用于表示界面的随机二维曲面。通过几个模拟实例说明了量子力学效应在研究氧化物厚度波动时的重要性。

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Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides

In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the quantum mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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