{"title":"InN纳米线晶体管的电激红外发射","authors":"Jia Chen, G. Cheng, E. Stern, M. Reed, P. Avouris","doi":"10.1109/DRC.2006.305187","DOIUrl":null,"url":null,"abstract":"We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination.","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"489 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrically-excited Infrared Emission from InN Nanowire Transistors\",\"authors\":\"Jia Chen, G. Cheng, E. Stern, M. Reed, P. Avouris\",\"doi\":\"10.1109/DRC.2006.305187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination.\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"489 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrically-excited Infrared Emission from InN Nanowire Transistors
We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination.
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