N. Xu, Jeff Sun, I. Chen, L. Hutin, Yenhao Chen, J. Fujiki, Chuang Qian, T. Liu
{"title":"超低功耗集成电路应用的混合CMOS/BEOL-NEMS技术","authors":"N. Xu, Jeff Sun, I. Chen, L. Hutin, Yenhao Chen, J. Fujiki, Chuang Qian, T. Liu","doi":"10.1109/IEDM.2014.7047130","DOIUrl":null,"url":null,"abstract":"Three-dimensional (3-D) nano-electro-mechanical (NEM) switches (relays) are proposed to reduce the die area and power consumption of digital logic and memory circuits.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications\",\"authors\":\"N. Xu, Jeff Sun, I. Chen, L. Hutin, Yenhao Chen, J. Fujiki, Chuang Qian, T. Liu\",\"doi\":\"10.1109/IEDM.2014.7047130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional (3-D) nano-electro-mechanical (NEM) switches (relays) are proposed to reduce the die area and power consumption of digital logic and memory circuits.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications
Three-dimensional (3-D) nano-electro-mechanical (NEM) switches (relays) are proposed to reduce the die area and power consumption of digital logic and memory circuits.