用于电流注入分析的肖特基势垒mosfet工艺与器件仿真

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) Pub Date : 2018-06-01 DOI:10.23919/MIXDES.2018.8436636

M. Schwarz, L. Calvet, J. Snyder, Tillmann A. Krauss, U. Schwalke, A. Kloes

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引用次数: 1

摘要

在本文中，我们专注于在Synopsys TCAD Sentaurus工具链的过程模拟器中实现sb - mosfet的工艺流程。简要讨论了包含地形的改进结构，并利用这些类型器件的最新物理模型进行了进一步的器件模拟。然后，讨论了一些关键参数，最后将结果与已制造的sb - mosfet进行了精度和过程模拟能力的比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection

In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. The improved structure containing topography is briefly discussed and further device simulations are applied with the latest physical models available for these type of devices. Afterwards, some key parameters are discussed and finally the results are compared with fabricated SB-MOSFETs in terms of accuracy and capability of process simulations.

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2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES)

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