基于NAND FLASH的三层容错存储策略

IEEE Conference Anthology Pub Date : 1900-01-01 DOI:10.1109/ANTHOLOGY.2013.6784969

Jian Song, Bing He

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引用次数: 1

摘要

提出了一种基于NAND闪存的三层容错存储策略。该策略是基于NAND FLASH的硬件特性，根据不同的级别添加相应的策略，有效提高NAND FLASH的容错能力，为存储的数据提供更高的安全性。本文在对数据安全性要求较高的情况下进行了实验分析设计，可以看出该策略能够提供较高的容错能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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NAND FLASH based three-tier fault-tolerant storage strategy

This paper proposes a NAND FLASH based three-tier fault-tolerant storage strategy. Based on the hardware properties of NAND FLASH, the strategy is to add corresponding strategies according to different levels, to improve the fault tolerance capacity of NAND FLASH effectively, and to provide higher security for the stored data. Designed with experimental analysis under the condition of high demand for data security in this paper, it can be seen that the strategy can provide higher fault tolerance capacity.

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IEEE Conference Anthology

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