微处理器的高性能插座表征技术

D. Figueroa, C. Chung, M.D. Cornelius, T. Yew, Yuan-liang Li
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引用次数: 9

摘要

目前,大多数插座供应商根据自己的“内部”特性设置提供不同的规格和测量数据,这导致了各种不同的数据报告。为了给设计人员提供正确选择插座或供应商的方法,标准规范和标准表征方法是必要的。本标准规范也将正确地表示插座的物理和电气性能。本文给出了一种新的套接字规范。为了更准确地估计插座寄生,提出了一种新的三维建模方法。提出了一种新的套接字模型分量值精确提取方法。该测量技术利用去嵌入过程和独特的测试夹具来确保最终的寄生值仅包括插座的寄生值。模型和测量的插座寄生率之间的差异在10%以内。该技术已被所有英特尔插座供应商证明并采用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance socket characterization technique for microprocessors
At present, most socket suppliers provide different specifications and measurement data based on their own "in-house" characterization set-up, which has resulted in a variety of different data reported. To provide a means for designers to correctly decide on a socket or vendor, a standard specification and standard characterization method are necessary. This standard specification will also correctly represent the physical and electrical behavior of the socket. In this paper, a new socket specification is given. To more accurately estimate the socket parasitics, a new 3D modeling method is proposed. A new measurement technique is defined for precisely extracting a socket's model component values. The measurement technique utilizes a de-embedding process and a unique test fixture to ensure the final parasitic values included only the parasitics of the socket. The difference between modeling and measured socket parasitics is within 10%. This technique has been demonstrated and adopted for all Intel socket suppliers.
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