{"title":"一种基于CNTFET的低复杂度、高能效标准三元逻辑门设计","authors":"Anisha Paul, B. Pradhan","doi":"10.1109/ICCECE51049.2023.10085528","DOIUrl":null,"url":null,"abstract":"This paper introduces novel low-complexity and power-efficient designs of standard ternary (ST) logic gates like the standard ternary inverter (STI), NAND (STNAND), NOR (STNOR), and XOR (STXOR) gates, along with the ternary minimum (TMIN) and ternary maximum (TMAX) operators using the CNTFET. The proposed designs use pass transistor logic (PTL), which reduces the complexity and increases the power efficiency of the designs. The proposed circuits are simulated in Synopsys HSPICE simulation tool using 32 nm CNTFET model provided by Stanford University. In each case, average power values and propagation delays are duly noted and power-delay-product (PDP) values are calculated. Simulation results prove that the proposed designs are more power-efficient and energy-efficient than the existing designs.","PeriodicalId":447131,"journal":{"name":"2023 International Conference on Computer, Electrical & Communication Engineering (ICCECE)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel Low-Complexity Power-Efficient Design of Standard Ternary Logic Gates using CNTFET\",\"authors\":\"Anisha Paul, B. Pradhan\",\"doi\":\"10.1109/ICCECE51049.2023.10085528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces novel low-complexity and power-efficient designs of standard ternary (ST) logic gates like the standard ternary inverter (STI), NAND (STNAND), NOR (STNOR), and XOR (STXOR) gates, along with the ternary minimum (TMIN) and ternary maximum (TMAX) operators using the CNTFET. The proposed designs use pass transistor logic (PTL), which reduces the complexity and increases the power efficiency of the designs. The proposed circuits are simulated in Synopsys HSPICE simulation tool using 32 nm CNTFET model provided by Stanford University. In each case, average power values and propagation delays are duly noted and power-delay-product (PDP) values are calculated. Simulation results prove that the proposed designs are more power-efficient and energy-efficient than the existing designs.\",\"PeriodicalId\":447131,\"journal\":{\"name\":\"2023 International Conference on Computer, Electrical & Communication Engineering (ICCECE)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 International Conference on Computer, Electrical & Communication Engineering (ICCECE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCECE51049.2023.10085528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 International Conference on Computer, Electrical & Communication Engineering (ICCECE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCECE51049.2023.10085528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文介绍了新型的低复杂度和节能的标准三元(ST)逻辑门设计,如标准三元逆变器(STI), NAND (STNAND), NOR (STNOR)和XOR (STXOR)门,以及使用CNTFET的三元最小(TMIN)和三元最大(TMAX)运算符。提出的设计采用通管逻辑(PTL),降低了设计的复杂性,提高了设计的功率效率。采用斯坦福大学提供的32nm CNTFET模型,在Synopsys HSPICE仿真工具中进行了电路仿真。在每种情况下,都适当地记录平均功率值和传播延迟,并计算功率延迟积(PDP)值。仿真结果表明,所提出的设计方案比现有的设计方案具有更高的节能性能。
A Novel Low-Complexity Power-Efficient Design of Standard Ternary Logic Gates using CNTFET
This paper introduces novel low-complexity and power-efficient designs of standard ternary (ST) logic gates like the standard ternary inverter (STI), NAND (STNAND), NOR (STNOR), and XOR (STXOR) gates, along with the ternary minimum (TMIN) and ternary maximum (TMAX) operators using the CNTFET. The proposed designs use pass transistor logic (PTL), which reduces the complexity and increases the power efficiency of the designs. The proposed circuits are simulated in Synopsys HSPICE simulation tool using 32 nm CNTFET model provided by Stanford University. In each case, average power values and propagation delays are duly noted and power-delay-product (PDP) values are calculated. Simulation results prove that the proposed designs are more power-efficient and energy-efficient than the existing designs.