{"title":"硅光子学微环调制器上的硅化镍电迁移","authors":"B. McGowan, M. Rakowski, Seungman Choi","doi":"10.1109/IRPS48203.2023.10118191","DOIUrl":null,"url":null,"abstract":"Electromigration (EM) tests were performed on NiSi silicide heaters that are part of a photonic micro ring modulator (MRM). Measurement of the temperature kinetics of failure suggests an activation energy close to 2.0eV. Failure analyses confirm Ni migration is the failure mechanism. Reliability limits established by the EM tests combined with characterization of the MRM's temperature response quantifies the tradeoffs between device performance and reliability.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"427 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics Technology\",\"authors\":\"B. McGowan, M. Rakowski, Seungman Choi\",\"doi\":\"10.1109/IRPS48203.2023.10118191\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromigration (EM) tests were performed on NiSi silicide heaters that are part of a photonic micro ring modulator (MRM). Measurement of the temperature kinetics of failure suggests an activation energy close to 2.0eV. Failure analyses confirm Ni migration is the failure mechanism. Reliability limits established by the EM tests combined with characterization of the MRM's temperature response quantifies the tradeoffs between device performance and reliability.\",\"PeriodicalId\":159030,\"journal\":{\"name\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"427 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS48203.2023.10118191\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10118191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics Technology
Electromigration (EM) tests were performed on NiSi silicide heaters that are part of a photonic micro ring modulator (MRM). Measurement of the temperature kinetics of failure suggests an activation energy close to 2.0eV. Failure analyses confirm Ni migration is the failure mechanism. Reliability limits established by the EM tests combined with characterization of the MRM's temperature response quantifies the tradeoffs between device performance and reliability.
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