选择性外延生长制备应变Ge FinFET结构

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874674

R. Loo, Jia-Lin Sun, L. Witters, A. Hikavyy, B. Vincent, Y. Shimura, P. Favia, O. Richard, H. Bender, W. Vandervorst, N. Collaert, A. Thean

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引用次数: 6

摘要

一种应变Ge FinFET结构的单步生长制造方案已成功开发并在器件制造方案中实现。从设备的角度来看，包含两个增长步骤的概念可能更有利。然而，它需要改进Si1-xGex表面的预环氧化氧化物去除。

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Strained Ge FinFET structures fabricated by selective epitaxial growth

A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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