一个采用65纳米CMOS技术的10位90 MS/s SAR ADC

J. Digel, M. Grozing, M. Berroth
{"title":"一个采用65纳米CMOS技术的10位90 MS/s SAR ADC","authors":"J. Digel, M. Grozing, M. Berroth","doi":"10.1109/SIRF.2016.7445483","DOIUrl":null,"url":null,"abstract":"This paper presents a 10 bit 90 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with an asynchronous conversion cycle control. The asynchronous operation allows the sampling rate to be swept over a wide range. The ADC doesn't require any external reference voltages and achieves an excellent performance without the need for calibration. The comparator uses an optimized topology which improves the decision time. At 90 MS/s, the measured effective resolution is 8.8 bit at DC and remains over 8.5 bit up to 90 MHz input frequency. With a power consumption of 1.76 mW, this results in a FoM of 44.1 fJ/conversion step. The ADC is fabricated in a 65 nm CMOS technology.","PeriodicalId":138697,"journal":{"name":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 10 bit 90 MS/s SAR ADC in a 65 nm CMOS technology\",\"authors\":\"J. Digel, M. Grozing, M. Berroth\",\"doi\":\"10.1109/SIRF.2016.7445483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 10 bit 90 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with an asynchronous conversion cycle control. The asynchronous operation allows the sampling rate to be swept over a wide range. The ADC doesn't require any external reference voltages and achieves an excellent performance without the need for calibration. The comparator uses an optimized topology which improves the decision time. At 90 MS/s, the measured effective resolution is 8.8 bit at DC and remains over 8.5 bit up to 90 MHz input frequency. With a power consumption of 1.76 mW, this results in a FoM of 44.1 fJ/conversion step. The ADC is fabricated in a 65 nm CMOS technology.\",\"PeriodicalId\":138697,\"journal\":{\"name\":\"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2016.7445483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2016.7445483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一种具有异步转换周期控制的10位90 MS/s逐次逼近寄存器(SAR)模数转换器(ADC)。异步操作允许采样率在一个很宽的范围内扫描。该ADC不需要任何外部参考电压,无需校准即可实现出色的性能。比较器使用优化的拓扑结构,从而提高了决策时间。在90 MS/s时,测量到的有效分辨率在直流时为8.8位,在90 MHz输入频率下保持在8.5位以上。功耗为1.76 mW,这导致FoM为44.1 fJ/转换步骤。该ADC采用65纳米CMOS技术制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 10 bit 90 MS/s SAR ADC in a 65 nm CMOS technology
This paper presents a 10 bit 90 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with an asynchronous conversion cycle control. The asynchronous operation allows the sampling rate to be swept over a wide range. The ADC doesn't require any external reference voltages and achieves an excellent performance without the need for calibration. The comparator uses an optimized topology which improves the decision time. At 90 MS/s, the measured effective resolution is 8.8 bit at DC and remains over 8.5 bit up to 90 MHz input frequency. With a power consumption of 1.76 mW, this results in a FoM of 44.1 fJ/conversion step. The ADC is fabricated in a 65 nm CMOS technology.
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