D. Wellekens, S. Van Elshocht, C. Adelmann, J. Meersschaut, J. Swerts, J. Kittl, A. Cacciato, I. Debusschere, M. Jurczak, J. van Houdt
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Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices
Rare-earth lanthanates and scandates have been studied for possible use as future Flash interpoly dielectrics. It was shown that a post-deposition anneal in O2 at high temperature (∼1000°C or above) gives rise to silicate formation. This results in excellent memory retention and larger robustness of the layers as compared to anneal in N2.
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