T. Ohzone, T. Hirao, K. Tsuji, S. Horiuchi, S. Takayanagi
{"title":"2K×8位静态RAM","authors":"T. Ohzone, T. Hirao, K. Tsuji, S. Horiuchi, S. Takayanagi","doi":"10.1109/IEDM.1978.189428","DOIUrl":null,"url":null,"abstract":"High density 2K×8-bit fully static RAM has been developed. Memory cell size of 23×27µm results in the chip size of 3.75×4.19mm, which is nearly equal to that of existing 4K-bit static RAM's. High packing density is realized by layout of 3µm photolithography and double-level polysilicon process permitting fabrication of memory load resistors upon driver MOSFET's.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"323 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 2K×8-bit static RAM\",\"authors\":\"T. Ohzone, T. Hirao, K. Tsuji, S. Horiuchi, S. Takayanagi\",\"doi\":\"10.1109/IEDM.1978.189428\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High density 2K×8-bit fully static RAM has been developed. Memory cell size of 23×27µm results in the chip size of 3.75×4.19mm, which is nearly equal to that of existing 4K-bit static RAM's. High packing density is realized by layout of 3µm photolithography and double-level polysilicon process permitting fabrication of memory load resistors upon driver MOSFET's.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"323 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189428\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High density 2K×8-bit fully static RAM has been developed. Memory cell size of 23×27µm results in the chip size of 3.75×4.19mm, which is nearly equal to that of existing 4K-bit static RAM's. High packing density is realized by layout of 3µm photolithography and double-level polysilicon process permitting fabrication of memory load resistors upon driver MOSFET's.
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