Xiao Xiao, Amanda Pratt, A. Niknejad, E. Alon, B. Nikolić
{"title":"一种65nm CMOS宽带TDD前端,通过PA复用集成T/R开关","authors":"Xiao Xiao, Amanda Pratt, A. Niknejad, E. Alon, B. Nikolić","doi":"10.1109/ESSCIRC.2016.7598272","DOIUrl":null,"url":null,"abstract":"A wideband time-division duplex (TDD) front-end with an integrated transmit/receive (T/R) switching technique is implemented in 65nm CMOS. By re-using the PA as an LNA during receive mode, the system eliminates the conventional series T/R switch from the signal path and utilizes only DC mode control switches to enable TDD co-existence. With integrated front-end balun transformer, the full polar transmitter achieves 20dBm peak output power with 32.7% peak drain efficiency. In receive mode, the PA is reconfigured into a wideband 3.4GHz-5.4GHz LNA achieving -6.7dBm P1dB and 5.1dB NF.","PeriodicalId":246471,"journal":{"name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 65nm CMOS wideband TDD front-end with integrated T/R switching via PA re-use\",\"authors\":\"Xiao Xiao, Amanda Pratt, A. Niknejad, E. Alon, B. Nikolić\",\"doi\":\"10.1109/ESSCIRC.2016.7598272\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband time-division duplex (TDD) front-end with an integrated transmit/receive (T/R) switching technique is implemented in 65nm CMOS. By re-using the PA as an LNA during receive mode, the system eliminates the conventional series T/R switch from the signal path and utilizes only DC mode control switches to enable TDD co-existence. With integrated front-end balun transformer, the full polar transmitter achieves 20dBm peak output power with 32.7% peak drain efficiency. In receive mode, the PA is reconfigured into a wideband 3.4GHz-5.4GHz LNA achieving -6.7dBm P1dB and 5.1dB NF.\",\"PeriodicalId\":246471,\"journal\":{\"name\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"volume\":\"178 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2016.7598272\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2016.7598272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 65nm CMOS wideband TDD front-end with integrated T/R switching via PA re-use
A wideband time-division duplex (TDD) front-end with an integrated transmit/receive (T/R) switching technique is implemented in 65nm CMOS. By re-using the PA as an LNA during receive mode, the system eliminates the conventional series T/R switch from the signal path and utilizes only DC mode control switches to enable TDD co-existence. With integrated front-end balun transformer, the full polar transmitter achieves 20dBm peak output power with 32.7% peak drain efficiency. In receive mode, the PA is reconfigured into a wideband 3.4GHz-5.4GHz LNA achieving -6.7dBm P1dB and 5.1dB NF.