一种65nm CMOS宽带TDD前端,通过PA复用集成T/R开关

Xiao Xiao, Amanda Pratt, A. Niknejad, E. Alon, B. Nikolić
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引用次数: 3

摘要

在65nm CMOS上实现了一种具有集成发射/接收(T/R)开关技术的宽带时分双工(TDD)前端。通过在接收模式中重新使用PA作为LNA,系统从信号路径中消除了传统的串联T/R开关,仅使用DC模式控制开关来实现TDD共存。集成前端平衡变压器,全极性变送器峰值输出功率达到20dBm,峰值漏极效率为32.7%。在接收模式下,PA被重新配置为宽带3.4GHz-5.4GHz LNA,实现-6.7dBm P1dB和5.1dB NF。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 65nm CMOS wideband TDD front-end with integrated T/R switching via PA re-use
A wideband time-division duplex (TDD) front-end with an integrated transmit/receive (T/R) switching technique is implemented in 65nm CMOS. By re-using the PA as an LNA during receive mode, the system eliminates the conventional series T/R switch from the signal path and utilizes only DC mode control switches to enable TDD co-existence. With integrated front-end balun transformer, the full polar transmitter achieves 20dBm peak output power with 32.7% peak drain efficiency. In receive mode, the PA is reconfigured into a wideband 3.4GHz-5.4GHz LNA achieving -6.7dBm P1dB and 5.1dB NF.
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