VLSI interconnect process integration

This paper describes VLSI interconnect process integration with respect to ULSI scaling. Both resistivity and capacitance are key factors for materials used in the interconnect process integration. In order to reduce parasitic resistances of sub-quarter micron CMOS transistors, salicide technologies have been developed for gate and source/drain electrodes. Copper interconnects and low-k interlayer dielectrics, in conjunction with CMP planarization, have been developed to reduce RC delay for future scaled ULSIs.