一个490-nA, 43-ppm/°C，低于0.8 v电源电压基准

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2014-11-03 DOI:10.1109/ESSCIRC.2014.6942035

P. B. Basyurt, D. Y. Aksin, E. Bonizzoni, F. Maloberti

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引用次数: 5

摘要

本文介绍了一种输出电压为193 mv的低功率带隙基准发生器。标称电源电压为0.8 V，但电路可以在低至0.65 V的电源下工作。该电路采用标准的0.18 μm CMOS技术制造，温度系数为43 ppm/°C，温度范围为0至120°C。消耗140 nA的采样数据放大器和消耗350 nA的反向电流模式带隙方案使实现的性能成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 490-nA, 43-ppm/°C, sub-0.8-V supply voltage reference

This paper presents a low power bandgap reference generator with 193-mV output voltage. The nominal supply voltage is 0.8 V, but the circuit can work with a supply down to 0.65 V. The circuit has been fabricated with a standard 0.18 μm CMOS technology and achieves a temperature coefficient of 43 ppm/°C for temperatures ranging from 0 to 120°C. A sampled-data amplifier consuming 140 nA and a reversed current-mode bandgap scheme draining 350 nA enable the achieved performance.

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ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

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