New low-resistance and compact MOSFETs for analog switch ICs with V-groove dielectric isolation

A low-resistance and compact MOSFET for analog switch ICs with Dielectric Isolation (DI) process technology is proposed. To obtain a high current density, we have developed new MOSFET with internal prominence, which reduce the drift resistance of devices with a high breakdown voltage. New N-ch and P-ch compact MOSFETs for level shifters have also been developed that can control saturation current with a low electric field under the gate region by using a junction field effect transistor structure for higher hot carrier reliability. The areas of these MOSFETs can be shrunk about 40% in 220-V devices.