J. Borland, S. Chaung, T. Tseng, A. Joshi, B. Basol, Yao-Jen Lee, T. Kuroi, G. Goodman, Nadya Khapochkina, T. Buyuklimanli
{"title":"比较RTA和激光SPE & LPE退火Ge-epi的Si, Sn和C注入的良好迁移率/应变工程","authors":"J. Borland, S. Chaung, T. Tseng, A. Joshi, B. Basol, Yao-Jen Lee, T. Kuroi, G. Goodman, Nadya Khapochkina, T. Buyuklimanli","doi":"10.23919/IWJT.2019.8802624","DOIUrl":null,"url":null,"abstract":"For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering\",\"authors\":\"J. Borland, S. Chaung, T. Tseng, A. Joshi, B. Basol, Yao-Jen Lee, T. Kuroi, G. Goodman, Nadya Khapochkina, T. Buyuklimanli\",\"doi\":\"10.23919/IWJT.2019.8802624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.\",\"PeriodicalId\":441279,\"journal\":{\"name\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IWJT.2019.8802624\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWJT.2019.8802624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.