比较RTA和激光SPE & LPE退火Ge-epi的Si, Sn和C注入的良好迁移率/应变工程

J. Borland, S. Chaung, T. Tseng, A. Joshi, B. Basol, Yao-Jen Lee, T. Kuroi, G. Goodman, Nadya Khapochkina, T. Buyuklimanli
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引用次数: 0

摘要

对于未掺杂<1E14/ cm3的Silicon-Cz晶圆,空穴迁移率(µh)为480cm 2 /Vs,而电子迁移率(µe)在1500cm 2 /Vs时高3.5倍,锗- cz晶圆在2000cm 2 /Vs时高4倍,在4800cm 2 /Vs时高3.5倍,如图1[1]所示。当掺杂水平增加到典型的p阱和n阱掺杂水平~1E18/cm 3时,Si的迁移率分别下降到µh =150cm 2 /Vs和µe =300cm 2 /Vs,分别下降了68%和80%;Ge的迁移率分别下降到µh =400cm 2 /Vs和µe =1000cm 2 /Vs,两者都下降了80%,但与Si相比,µh增加了2.7倍,µe增加了3.3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.
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