硅纳米晶体尺寸及结构缺陷的电子显微镜表征

E. Sebastian, Jie Zhu, Z. Mo
{"title":"硅纳米晶体尺寸及结构缺陷的电子显微镜表征","authors":"E. Sebastian, Jie Zhu, Z. Mo","doi":"10.1109/IPFA47161.2019.8984809","DOIUrl":null,"url":null,"abstract":"Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes\",\"authors\":\"E. Sebastian, Jie Zhu, Z. Mo\",\"doi\":\"10.1109/IPFA47161.2019.8984809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

基于硅纳米晶体(NCs)的闪存不易受隧道氧化物中电荷损失的影响,允许隧道氧化物从~100A降至~50A,从而降低工作电压并提高循环续航性能。控制硅纳米材料性能的最关键参数包括尺寸、尺寸分布和最佳面积密度(#/cm2)。本研究的目的包括开发一种针对大量硅纳米管的图像处理方法,对不同的电子显微镜成像技术进行评价和比较,并研究硅纳米管的结构缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes
Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.
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