{"title":"硅纳米晶体尺寸及结构缺陷的电子显微镜表征","authors":"E. Sebastian, Jie Zhu, Z. Mo","doi":"10.1109/IPFA47161.2019.8984809","DOIUrl":null,"url":null,"abstract":"Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes\",\"authors\":\"E. Sebastian, Jie Zhu, Z. Mo\",\"doi\":\"10.1109/IPFA47161.2019.8984809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes
Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.