铜合金上焊接硅器件的可靠性

Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future' Pub Date : 1995-10-02 DOI:10.1109/IEMT.1995.526107

A. Achari, W. Green

{"title":"铜合金上焊接硅器件的可靠性","authors":"A. Achari, W. Green","doi":"10.1109/IEMT.1995.526107","DOIUrl":null,"url":null,"abstract":"Functional reliability of power ICs is dependent on the integrity of IC/heat transfer joint area. Any major reactions during soldering on the heat-spreader and transport of reaction products to the silicon/metal interface have an adverse effect on the IC performance. The robustness of silicon backside metallization and the selection of metallization scheme can prevent the solder reactions at the silicon surface. This paper presents the evaluation of solder reactions with silicon and their impact on the package reliability.","PeriodicalId":123707,"journal":{"name":"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability of soldered silicon devices on copper alloys\",\"authors\":\"A. Achari, W. Green\",\"doi\":\"10.1109/IEMT.1995.526107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Functional reliability of power ICs is dependent on the integrity of IC/heat transfer joint area. Any major reactions during soldering on the heat-spreader and transport of reaction products to the silicon/metal interface have an adverse effect on the IC performance. The robustness of silicon backside metallization and the selection of metallization scheme can prevent the solder reactions at the silicon surface. This paper presents the evaluation of solder reactions with silicon and their impact on the package reliability.\",\"PeriodicalId\":123707,\"journal\":{\"name\":\"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.1995.526107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1995.526107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

电源集成电路的功能可靠性取决于集成电路/传热接头区域的完整性。在散热器上焊接和反应产物向硅/金属界面传输过程中的任何主要反应都会对集成电路的性能产生不利影响。硅背面金属化的坚固性和金属化方案的选择可以防止硅表面的焊料反应。本文介绍了与硅的焊料反应及其对封装可靠性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability of soldered silicon devices on copper alloys

Functional reliability of power ICs is dependent on the integrity of IC/heat transfer joint area. Any major reactions during soldering on the heat-spreader and transport of reaction products to the silicon/metal interface have an adverse effect on the IC performance. The robustness of silicon backside metallization and the selection of metallization scheme can prevent the solder reactions at the silicon surface. This paper presents the evaluation of solder reactions with silicon and their impact on the package reliability.

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来源期刊

Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'

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