{"title":"为BiCMOS电路选择的工艺方案","authors":"J. Bian, W. Lu","doi":"10.1109/HKEDM.1994.395141","DOIUrl":null,"url":null,"abstract":"Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers.<<ETX>>","PeriodicalId":206109,"journal":{"name":"1994 IEEE Hong Kong Electron Devices Meeting","volume":"366 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A process scheme chosen for BiCMOS circuit\",\"authors\":\"J. Bian, W. Lu\",\"doi\":\"10.1109/HKEDM.1994.395141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers.<<ETX>>\",\"PeriodicalId\":206109,\"journal\":{\"name\":\"1994 IEEE Hong Kong Electron Devices Meeting\",\"volume\":\"366 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1994 IEEE Hong Kong Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1994.395141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 IEEE Hong Kong Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1994.395141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers.<>
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