CVD-WSi/sub - x/多晶硅互连中的开路故障

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.78036

M. Shishino, T. Nishiwaki, A. Mitsui, S. Imanishi, M. Shiraishi

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引用次数: 1

摘要

研究发现，在超大规模集成电路制造过程中，在回流玻璃上形成的多晶硅互连在热处理过程中被打开。在失效分析中，观察到裂缝。这些裂纹起源于WSi/sub x/薄膜的裂纹。为了防止这些故障，详细研究了WSi/sub x/互连中裂纹与WSi/sub x/薄膜性能之间的相关性。通过降低WSi/sub x/薄膜的拉伸应力以及降低其氟浓度，可以抑制多晶硅互连中的开口失效。

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Open circuit failures in CVD-WSi/sub x//poly-Si interconnects

It was observed that the polycide interconnect formed on reflowed glass opened during heat treatment in VLSI fabrication. In failure analysis, crevices were observed. These crevices originated from cracks in the WSi/sub x/ film. In order to prevent these failures, correlations between the cracks in the WSi/sub x/ interconnect and the properties of the WSi/sub x/ film are examined in detail. Open failures in polycide interconnects are suppressed by decreasing the tensile stress of WSi/sub x/ films as well as by decreasing their fluorine concentration.<>

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Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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