6.6+ GHz低Vmin，读取和半选择无干扰的1.2 Mb SRAM

2007 IEEE Symposium on VLSI Circuits Pub Date : 2007-06-14 DOI:10.1109/VLSIC.2007.4342738

R. Joshi, R. Houle, K. Batson, D. Rodko, P. Patel, W. Huott, R. Franch, Y. Chan, D. Plass, S. Wilson, P. Wang

{"title":"6.6+ GHz低Vmin，读取和半选择无干扰的1.2 Mb SRAM","authors":"R. Joshi, R. Houle, K. Batson, D. Rodko, P. Patel, W. Huott, R. Franch, Y. Chan, D. Plass, S. Wilson, P. Wang","doi":"10.1109/VLSIC.2007.4342738","DOIUrl":null,"url":null,"abstract":"A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.","PeriodicalId":261092,"journal":{"name":"2007 IEEE Symposium on VLSI Circuits","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"59","resultStr":"{\"title\":\"6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM\",\"authors\":\"R. Joshi, R. Houle, K. Batson, D. Rodko, P. Patel, W. Huott, R. Franch, Y. Chan, D. Plass, S. Wilson, P. Wang\",\"doi\":\"10.1109/VLSIC.2007.4342738\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.\",\"PeriodicalId\":261092,\"journal\":{\"name\":\"2007 IEEE Symposium on VLSI Circuits\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"59\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2007.4342738\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2007.4342738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 59

摘要

一个全功能的读取和半选择干扰的1.2 Mb SRAM演示。测量结果表明，工作范围为0.4 V至1.5 V， -25°c至100°c，在IV, 25°c时速度为6.6 GHz，收率为90-100%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM

A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE Symposium on VLSI Circuits

自引率

0.00%

发文量