玻璃上数字与模拟多晶硅TFT电路的制作与性能

ESSCIRC '92: Eighteenth European Solid-State Circuits conference Pub Date : 1992-09-01 DOI:10.1109/ESSCIRC.1992.5468208

C. Reita, S. Fluxman, A. Butler, A. J. Lowe, M. Izzard, P. Migliorato, H.G. Yang

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引用次数: 2

摘要

基于多晶硅薄膜晶体管(poly-Si TFTs)的数字和模拟电路是通过低温(≪650℃)工艺在玻璃上设计和制造的。制作并测试了用于amlcd和各种类型运算放大器集成驱动器的CMOS移位寄存器和逻辑电路。

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Fabrication and Performance of Digital and Analogue Poly-Si TFT Circuits on Glass

Digital and analogue circuits based on polysilicon thin film transistors (poly-Si TFTs) have been designed and fabricated on glass by a low temperature (≪650 C) process. CMOS shift registers and logic circuitry for integrated drivers for AMLCDs and various types of operational amplifier have been fabricated and tested.

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ESSCIRC '92: Eighteenth European Solid-State Circuits conference

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