基于FD-SOI技术的高效率无锁存开关电容上变频器

2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302) Pub Date : 2002-06-13 DOI:10.1109/VLSIC.2002.1015107

J. Kajiwara, M. Kinoshita, S. Sakiyama, A. Matsuzawa

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引用次数: 3

摘要

我们在0.35 /spl mu/m FD-SOI技术上开发了一种无锁存开关电容(SC)型升压转换器。在本文中，我们提出了功率效率和输出电压的近似理论表达式。一个测试芯片证实了这些理论表达式的有效性。因此，我们可以优化上变频器在不同负载电流下的性能。包括自功率在内，上变频器的功率转换效率为93.5%。直流负载电流为1ma，开关频率为100khz，输入电压为0.8 V，输出电压为1.55 V，电容为10 /spl mu/F。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High efficiency and latch-up free switched capacitor up converter on FD-SOI technology

We have developed a latch-up free Switched Capacitor (SC) type voltage up converter on 0.35 /spl mu/m FD-SOI technology. In this paper, we propose approximate theoretic expressions of the power efficiency and the output voltage. A test chip confirms the validity of these theoretic expressions. As a result, we can optimize the performances for various load currents of the up converter. The up converter achieved a power conversion efficiency of 93.5% including self-power. consumption at 1 mA DC load current, where switching frequency is 100 kHz, input voltage is 0.8 V, V out is 1.55 V, and capacitance is 10 /spl mu/F.

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2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)

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