一种用于肌电信号传感的低功耗可编程增益集成前端

Ehab A. Hamed, M. Atef, M. Abbas
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引用次数: 1

摘要

本文介绍了肌电图(electromyogram, EMG)前端的设计和后期布局仿真。该架构具有超低功耗和增益可重构的特点。设计了三个阶段来形成整个前端。第一级是极高效的单端放大器。第二级是可编程增益差分端放,提高整体电源抑制比、共模抑制比和动态范围。最后,第三级是缓冲级,将负载与放大器隔离开来。前两级采用级联mosfet设计,以增加中频增益。采用130纳米CMOS技术对整个设计进行了布局后仿真。结果表明,该设计在5.3 Hz ~ 1.72 kHz范围内具有60.36 dB的中频增益。使用1.1 V的电源电压,前两级消耗$\pmb{1.06\mu a}$。输入参考噪声为$2.95\mu \ mathm {V}_{\ mathm {rms}}$。共模抑制比大于94.5 dB,电源抑制比大于79.4 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low Power Programmable Gain Integrated Front-End for Electromyogram Signal Sensing
This paper presents the design and post layout simulation for electromyogram (EMG) front-end. The architecture is characterized by ultralow power consumption and gain reconfigurability. Three stages are designed to form the whole front-end. The first stage is extremely efficient single ended amplifier. The second stage is programable gain differential ended amplifier, to enhance the overall supply rejection ratio, common mode rejection ratio and the dynamic range. Finally, the third stage is a buffer stage to isolate the loading from the amplifier. The first two stages are designed with cascode MOSFETs to increase the midband gain. The full design was post-layout simulated using 130 nm CMOS technology. The results show that the design has 60.36 dB mid-band gain in range of 5.3 Hz to 1.72 kHz. Using a supply voltage of 1.1 V, the first two stages consume $\pmb{1.06\mu A}$. The input referred noise is $2.95\mu \mathrm{V}_{\mathrm{rms}}$. The common mode and power supply rejection ratios are above 94.5 dB and 79.4 dB respectively.
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