定位嵌入式内存故障的LADA方法

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915715

B. Yeoh, M.H. Thor, L.S. Gan, Y. Chan, S. Goh

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引用次数: 1

摘要

动态激光刺激(DLS)技术在集成电路软故障调试方面取得了巨大成功。激光辅助器件改造(Laser assisted device change, LADA)是一种成熟的DLS技术，用于解决速度路径故障和分析无缺陷性能限制电路。在这项工作中，我们讨论了非典型LADA分析来定位片上系统(SOC)存储器制造的软缺陷和硬缺陷。

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LADA methodologies to localize embedded memory failure

Dynamic Laser Stimulation (DLS) techniques have met with great success to debug integrated circuit (IC) soft failure. Laser assisted device alteration (LADA) is one of the DLS technique well-established to tackle speed-path failure and analysis of defect-free performance limiting circuits. In this work, we discuss atypical LADA analysis to localize system-on-chip (SOC) memory manufacturing soft and hard defects.

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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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