用透射电镜对高过孔电阻失效分析研究

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898200

Binghai Liu, E. Er, S. Zhao, C. Chen, A. G. Boon, Kunihiko Takahashi, C. Subbu, J. Lam

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摘要

在这项工作中，我们报告了一个案例研究ET(电气测试)失败与高电阻问题。为了了解高通孔电阻的失效机理和根本原因，我们利用各种TEM FA(失效分析)技术，包括EDX、EELS分析，进行了详细的TEM(透射电镜)分析。结果表明，由于工艺漂移引起的铝挤压和孔底阻挡金属覆盖度差，导致通孔电阻过高。讨论了TEM FA识别的物理特征与相关过程之间的相关性，以了解根本原因。

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Study on the high via resistance by TEM failure analysis

In this work we reported a case study on ET (electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and root cause behind the high via resistance, detailed TEM(transmission electron microscope) analysis was performed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was found out that high via resistance arose from the process drift-induced Al extrusion and poor barrier metal coverage at via bottom. The correlation between the physical signatures identified by TEM FA and the associated processes were discussed for the root cause understanding.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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