具有低注入打孔(LiPT)结构的先进ight[高导电性IGBT]

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239837

K. Oyama, T. Arai, K. Saitou, K. Masuda, M. Mori

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引用次数: 17

摘要

本文介绍了一种新型的高导电性IGBT (high-conductivity IGBT)，它是由低注入(LiPT: low injection) p-emitter和具有孔垒和穿孔结构的平面栅极相结合而成的。实验结果和理论讨论表明，该4.5 kV高级HiGT具有显著的低损耗特性和较强的抗短路性。这些结果首次证明，即使使用LiPT，集成在平面IGBT中的孔势垒也是有效的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced HiGT with low-injection punch-through (LiPT) structure [high-conductivity IGBT]

This paper describes a new advanced HiGT (high-conductivity IGBT) which is the combination of a low injection (LiPT: low injection punch-through) p-emitter and a planar gate with a hole barrier and punchthrough structure. The experimental results and theoretical discussion of this 4.5 kV advanced HiGT show remarkable low-loss characteristics and strong short-circuit immunity. These results prove for the first time that a hole barrier integrated in a planar IGBT is effective even with LiPT.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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